![]() The blocks can be configured to perform summation and integration and provide filtering over a range of 10 to 100 kHz, with resolution selectable from thousands of combinations. ![]() The ispPAC10 includes four filter summation blocks connected by an analog routing pool. Both devices are available now for $7 in quantities of 1,000. The company's first two offerings are the ispPAC10 and ispPAC20. ![]() “If you scale out the high-performance and low end, you're down to a $4 billion market that we have the potential to penetrate.” Electronic Structure and Optical Properties of Semiconductors (Springer, Berlin/Heidelberg, 1988).“The whole linear and mixed-signal market will total about $23 billion in 1999,” he said. Band gaps in some group-IV materials: A theoretical analysis. Molecular Beam Epitaxy: Fundamentals and Current Status (Springer, Berlin/Heidelberg, 1989).Ĭorkill, J. Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si. Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies. Momentum-space formalism for the total energy of solids. Novel methods for CVD of Ge4C and (Ge4C)xSiy diamond-like semiconductor heterostructures: Synthetic pathways and structures of trigermyl-(GeH3)3CH and tetragermyl-(GeH3)4C methanes. An improved synthetic pathway to tetrasilyl methane and the synthesis of disilylpropane. Die Kristall- und Molekulstruktur von Tetrakis(trimethylstannyl)methan. Ultrathin pseudomorphic Sn/Si and SnxSi1-x/Si heterostructures. ![]() Interband transitions in SnxGe1-x alloys. Band structure and instability of Ge1-xSnx alloys. Electronic properties of metastable GexSn1-x alloys. Growth and characterization of thin Si80C20 films based upon Si4C building blocks. Synthesis and atomic and electronic structure of new Si-Ge-C alloys and compounds. New approach to the growth of low dislocation relaxed SiGe material. New approach to grow pseudomorphic structures over the critical thickness. Lattice engineered compliant substrate for defect-free heteroepitaxial growth. Deliberately designed materials for optoelectronics applications. ![]() The calculated bandgaps (and hence the frequency of emitted light) lie in the window of minimal absorption in current optical fibres. We have computationally designed two hypothetical direct-bandgap semiconductor alloys, the synthesis of which should be possible through the deposition of specific group-IV precursor molecules 5, 6 and which lattice-match silicon to 0.5–1% along lattice planes with low Miller indices. Here we propose a more direct solution to integrating silicon electronics with optical components. Much recent work has therefore focused on introducing compliant transition layers between the mismatched components 2, 3, 4. But no direct-bandgap semiconductor has yet been produced that can lattice-match silicon, and previously suggested structures 1 pose formidable challenges for synthesis. For well ordered materials, this effectively translates into the requirement that such materials lattice-match silicon: lattice mismatch generally causes cracks and poor interface properties once the mismatched overlayer exceeds a very thin critical thickness. The successful integration of silicon-based electronics with optical components will therefore require optically active (for example, direct-bandgap) materials that can be grown on silicon with high-quality interfaces. Crystalline silicon is an indirect-bandgap semiconductor, making it an inefficient emitter of light. ![]()
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